Hall-Effect Current Sensor (K5X) Current Transducer

• Type: Hall Type
• Output Signal Type: Analog Output
• Production Process: SemiConductor Integrated
• Material: Plastic
• Accuracy Grade: 0.5G
• Application: Switching Power Supply
• Model NO.: K5X
• IP Rating: IP65
• Certification: ISO
• Customized: Customized
• Output: Analog Sensor
• Theory: Hall Sensor
• Rated Output(Io DC): @IP=+-Ipn AC 4~20+-1%
• Supply Voltage: +-12V +-15V
• Power Consumption: +35+ Io
• Zero Current: @IP=0 4+-0.1 +-25
• Linearity: @IP=0-+-Ipn <=1
• Transport Package: Green Plastic Film
• Specification: CE, ISO, Rohs
• Trademark: HEYI
• Origin: Liushi, Yueqing, Zhejiang Province, China
• HS Code: 8542390000
• Production Capacity: 5000PCS/Month

Product Description

The magnetic flux created by the primary current IP is balanced by a complementary flux produced by driving a current through the secondary windings. A hall device and associated electronic circuit are used to generated the secondary (compensating) current that is an extract representation of the primary current.
Current sensor, is a detection device, can feel the information of the measured current, and can detect and feel the information, according to a certain law to transform into a certain standard needs to meet the needs of the electrical signal or other required forms of information output, in order to meet the transmission of information, processing, storage, display, recording and control and other requirements.

Type	K5X-200A	K5X-500A	K5X-1000A	K5X-1500A
Primary nominal input current	200	500	1000	1500	A
Measuring range of primary current	0- ± 400	0- ± 1000	0- ± 2000	0- ± 2500	A
Secondary nominal output voltage	4± 1%				V
Supply voltage	± 12- - ± 15				V
Current consumption	20+Is				mA
Insulation voltage	6KV/50Hz/1min
Linearity	1				%FS
Zero offset voltage	(TA=25C)                      ± 25				mV
Residual voltage	± 30				mV
Thermal drift of V0	± 1				mV/C
Response time	7				μ s
Frequency bandwidth(-3dB)	DC- - 20				KHz
Ambient operating temperature	-40- - +85				C
Ambient storage temperature	-40- - +125				C
Load resistance	(TA=25C)                      ≥ 10K				Ω